| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Number of Pins | |
| Power Dissipation |
The BF981 is a silicon N-channel dual gate MOS-FET manufactured by NXP Semiconductors. This component is designed for RF amplifier applications and features a maximum drain-source voltage of 20V and a maximum drain current of 20mA. It has a power dissipation rating of 225mW.
The BF981 is housed in a 4-pin SOT103 package. Its dual-gate construction is typical for RF applications, allowing for better control of amplification and impedance matching.
This device is suitable for various RF circuits where a low-power, general-purpose FET is required. Its specifications make it a candidate for signal amplification stages in radio frequency systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.07 | $1.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 20V.
The maximum drain current is 20mA.
The power dissipation is 225mW.
The BF981 is in a 4-pin SOT103 package.