Mfr Part #:

BF966S

Mfr Name: Telefunken

The BF966S is an N-Channel Dual Gate MOSFET Transistor from Telefunken, suitable for UHF applications. It features a 20V drain-source voltage and a 0.03A continuous drain current.

✓ Total Stock: 8 pcs

$ Price Range: $1.93

BF966S Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Partservice ✓ Non-Authorised Inventory information	8 pcs On Request	8 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

BF966S Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Telefunken
Approval Agency	Up to 800 MHz
Channel Type	N-Channel
Configuration	Single Dual Gate
Frequency Range	Up to 800 MHz
Mounting Type	Surface Mount

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BF966S Description

Short technical summary and product information.

The BF966S is a dual-gate N-channel MOSFET transistor designed for UHF applications. It is manufactured by Telefunken and comes in a TO-50 surface-mount package.

Key electrical characteristics include a maximum drain-source voltage of 20V and a maximum continuous drain current of 0.03A. The device operates in depletion mode and offers a typical power gain of 25dB. Its operating temperature range spans from -55°C to 150°C.

This transistor is suitable for various RF and high-frequency applications where its dual-gate structure can provide independent control of amplification and impedance. The surface-mount TO-50 package facilitates integration into compact circuit designs.

BF966S Quick Information

Product Type: MOSFET Transistor

Canonical Name: BF966S N-Channel Dual Gate MOSFET Transistor

Subcategory: Dual Gate

BF966S Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

BF966S Estimated Pricing

Qty	Low	High
1+	$1.93	$1.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

BF966S Features

N-Channel Dual Gate MOSFET Transistor
Maximum drain-source voltage of 20V
Maximum continuous drain current of 0.03A
Surface mount TO-50 package
Operating temperature range -55°C to 150°C

BF966S Applications

Suitable for RF amplification circuits up to 800 MHz.
Used in high-frequency switching applications.
Ideal for depletion mode transistor configurations.
Applicable in low-power signal processing devices.
Suitable for surface-mount RF and switching modules.

BF966S FAQs

5 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage for the BF966S?

The maximum drain-source voltage for the BF966S is 20V.

What is the maximum continuous drain current of the BF966S transistor?

The maximum continuous drain current for the BF966S is 0.03A.

What type of package is the BF966S MOSFET in?

The BF966S MOSFET is supplied in a TO-50 package.

What is the operating temperature range for the BF966S?

The BF966S operates between -55°C and 150°C.

What is the channel type and mode of the BF966S transistor?

The BF966S is an N-Channel, Depletion Mode MOSFET transistor.