BF961 The BF961 is an N-Channel Dual Gate MOS-Fieldeffect Tetrode from Vishay, designed for RF applications. It features a 20V drain-source voltage and 200mW maximum power dissipation.
Mfr Part #:

BF961

Available from 1 distributors
Mfr Name: Siemens
Siemens
The BF961 is an N-Channel Dual Gate MOS-Fieldeffect Tetrode from Vishay, designed for RF applications. It features a 20V drain-source voltage and 200mW maximum power dissipation.
Total Stock: 40,004 pcs
$ Price Range: $0.99

BF961 Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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40,004 pcs
40004 pcs On Request 1 On Request On Request On Request On Request On Request

BF961 Specifications Quick View

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BF961 Description

Short technical summary and product information.

The BF961 is an N-Channel Dual Gate MOS-Fieldeffect Tetrode manufactured by Vishay. This component is designed for RF small signal applications and operates within the very high frequency band.

 

Key electrical specifications include a maximum drain-source voltage of 20V and a maximum power dissipation of 200mW. The operating temperature range is from -55°C to 150°C.

 

The BF961 comes in a TO-50 package and is designed for surface mounting. It has 4 terminals, making it suitable for various circuit designs requiring a dual-gate FET.

 

This transistor is a reliable choice for engineers working on high-frequency circuits where precise signal control is essential.

BF961 Quick Information

Product Type: RF Small Signal Field-Effect Transistor
Canonical Name: BF961 N-Channel Dual Gate MOS-Fieldeffect Tetrode
Subcategory: Dual Gate MOS-Fieldeffect Tetrode

BF961 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BF961 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BF961 Features

  • N-Channel Dual Gate MOS-Fieldeffect Tetrode
  • 20V maximum drain-source voltage
  • 200mW maximum power dissipation
  • TO-50 surface mount package
  • Wide operating temperature range

BF961 Applications

  • Ideal for RF signal amplification
  • Suitable for high-frequency circuits
  • Used in signal switching applications
  • Designed for dual-gate FET requirements

BF961 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the BF961?

The maximum drain-source voltage for the BF961 is 20V.

What is the maximum power dissipation of the BF961?

The maximum power dissipation for the BF961 is 200mW.

What is the operating temperature range for the BF961?

The BF961 operates between -55°C and 150°C.

What package type is the BF961 available in?

The BF961 is available in a TO-50 package.

How is the BF961 mounted?

The BF961 is designed for surface mounting.

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