| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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540 pcs
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540 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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The NXP Semiconductors BF909R is an N-channel dual gate RF MOSFET. It is specifically designed for applications requiring a 5V supply voltage. This device features an internal bias circuit to ensure good cross-modulation performance during AGC.
Key electrical characteristics include a drain-source breakdown voltage of 7V and a continuous drain current of up to 40mA at 5V gate-source voltage. The MOSFET operates at frequencies up to 800MHz.
The BF909R is housed in a SOT-143R surface-mount package, making it suitable for compact electronic designs. Its dual-gate construction provides flexibility in circuit design, particularly in RF amplification and switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BF909R is an N-channel dual gate RF MOSFET.
The BF909R is designed for use at a 5V supply voltage.
The BF909R operates at frequencies up to 800MHz.
The BF909R is available in a SOT-143R package.
The BF909R is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BF909R is 1 Unlimited.
