| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
328,727 pcs
|
328727 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Frequency | |
| Gain | |
| SVHC Present | |
| Supplier Device Package |
The BF908WR from Philips is a high-performance RF Power MOSFET. It is engineered for demanding RF applications, offering a robust breakdown voltage of 65V and a significant output power capability of 55W. The device operates within the L-band frequency range, specifically between 1.8GHz and 1.88GHz, with a typical gain of 18dB. It is housed in a SOT-502A package and supports surface mounting.
This N-channel MOSFET utilizes Metal-Oxide Semiconductor technology, making it suitable for amplifier applications. The component is rated for 28V test voltage and 1.62A test current, providing reliable performance in its intended operating conditions. Its construction and specifications make it a suitable choice for various RF power amplification circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The output power is 55W.
The gain is 18dB.
It operates from 1.8 GHz to 1.88 GHz.
The rated voltage is 65V.
It is available in a surface-mount SOT-502A package, supplied in a tray.
Test condition is 28V at 1.62A.
The minimum drain-source breakdown voltage is 65V.