| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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358 pcs
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358 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BF904AR from NXP Semiconductors is an N-channel dual gate MOS-FET designed for use in VHF and UHF applications requiring a 3 to 7 V supply voltage. This enhancement-type field-effect transistor features a short channel design with a high transfer admittance to input capacitance ratio, making it suitable for low noise gain controlled amplification up to 1 GHz.
Key electrical characteristics include a maximum drain-source voltage of 7V and a drain current of up to 30mA. The forward transfer admittance (Yfs) is typically 25mS, with a maximum of 30mS. Input capacitance (Ciss) is typically 2.2pF, and reverse transfer capacitance (Crss) is typically 25fF at 1 MHz. The noise figure is a low 2 dB at 800 MHz.
The BF904AR is encapsulated in a SOT-143R plastic package, designed for surface mounting. Its superior cross-modulation performance during Automatic Gain Control (AGC) makes it ideal for applications such as television tuners and professional communications equipment.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the BF904AR is 7V.
The typical forward transfer admittance (Yfs) of the BF904AR is 25 mS.
The noise figure of the BF904AR at 800 MHz is typically 2 dB.
The BF904AR is supplied in a SOT-143R plastic package.