| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9 pcs
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9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BF870 from Siemens is a PNP bipolar junction transistor (BJT) designed for high-voltage applications. It is housed in a TO-202 plastic package and features a low feedback capacitance.
Key electrical specifications include a collector-emitter voltage (VCEO) of 250V and a peak collector current (ICM) of 100mA. The DC current gain (hFE) is a minimum of 50 under specific test conditions. The transistor also exhibits a feedback capacitance (Cre) of up to 2.2 pF and a transition frequency (fT) of at least 60 MHz.
Thermal characteristics are important for this device, with a total power dissipation (Ptot) rated at 5W when measured at the mounting base temperature (Tmb) of 25°C, and 1.6W when measured at an ambient temperature (Tamb) of 25°C. The junction temperature (Tj) can reach up to 150°C, with storage temperatures ranging from -65°C to +150°C.
This transistor is suitable for use in class-B video output stages of color television receivers. Its TO-202 package is designed for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.45 | $0.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BF870 is 250V.
The peak collector current (ICM) for the BF870 is 100mA.
The total power dissipation (Ptot) for the BF870 at Tmb ≤ 25 °C is 5W.
The DC current gain (hFE) of the BF870 is a minimum of 50 under conditions of IC = -25 mA and VCE = -20 V at 25 °C.
The feedback capacitance (Cre) of the BF870 is a maximum of 2.2 pF.
The transition frequency (fT) for the BF870 is a minimum of 60 MHz.
The BF870 is supplied in a TO-202 plastic package.