| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,690 pcs
|
3690 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current Rating (Amps) | |
| Mounting Type | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Voltage |
BF862,215 is an N-Channel JFET from NXP Semiconductors. It is rated for a minimum drain-source breakdown voltage of 20V and a maximum drain current of 25mA. The device comes in a TO-236-3, SC-59, SOT-23-3 package, with a supplier device package of SOT-23 (TO-236AB). It is designed for surface-mount applications.
This JFET is categorized under RF transistors, making it suitable for RF signal processing circuits. The surface-mount SOT-23 package allows for compact circuit board layouts. The part is listed as RoHS3 compliant, though this status is unverified.
With its N-Channel configuration and moderate voltage and current ratings, this JFET can be used in various analog switching and amplification applications where low noise and high input impedance are desired.
The minimum drain-source breakdown voltage is 20V.
The maximum drain current is 25mA.
The package is TO-236-3, SC-59, SOT-23-3, with a supplier device package of SOT-23 (TO-236AB).
The mounting type is surface mount.
The part is listed as RoHS3 compliant, but this status is unverified.
It is a JFET with N-Channel configuration.