| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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79 pcs
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79 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Power Dissipation |
The BF857 is a bipolar junction transistor (BJT) manufactured by NXP Semiconductors. This component is designed for various electronic applications requiring specific current and voltage handling capabilities.
Key electrical specifications include a maximum collector current of 100mA and a collector emitter voltage rating of 160V. The transistor also has a typical collector emitter saturation voltage of 1V. For thermal management, the maximum power dissipation is rated at 1.8W, with a typical power dissipation of 6W. The maximum operating temperature is 140°C.
This transistor has 3 terminals. While specific package details and mounting type are not detailed here, it is categorized under Transistors - Bipolar (BJT) - Single, Pre-Biased.
The BF857 is listed with a RoHS3 Compliant status, Moisture Sensitivity Level (MSL) of 1, and REACH Unaffected status. However, these compliance details are based on existing database information and have not been independently verified by documentation.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the BF857 transistor is 100mA.
The collector emitter voltage of the BF857 is 160V.
The typical collector emitter saturation voltage for the BF857 is 1V.
The maximum power dissipation of the BF857 transistor is 1.8W.
The maximum operating temperature for the BF857 is 140°C.