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BF776H6327 The BF776H6327 is an NPN RF transistor from Infineon Technologies, designed for low-noise amplification. Key specs include 200mW power dissipation, 46GHz fT, and 0.8-1.3dB noise figure.
Mfr Part #:

BF776H6327

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The BF776H6327 is an NPN RF transistor from Infineon Technologies, designed for low-noise amplification. Key specs include 200mW power dissipation, 46GHz fT, and 0.8-1.3dB noise figure.
✓ Total Stock: 1,005 pcs

BF776H6327 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
610 pcs
On Request
610 pcs On Request 1 On Request On Request 17+ On Request On Request
Rayichip ✓
Non-Authorised Inventory information
395 pcs
On Request
395 pcs On Request 1 On Request On Request On Request On Request On Request
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BF776H6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Mounting Type
Noise Figure (dB Typ @ f)
Operating Temperature
Power
Supplier Device Package
Transistor Type
Voltage
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BF776H6327 Description

Short technical summary and product information.

The BF776H6327 is an NPN silicon RF transistor from Infineon Technologies, optimized for low-noise amplifier applications up to 6 GHz. It offers a typical transition frequency of 46 GHz, enabling high-frequency performance in communication and radar systems.

 

Key electrical characteristics include a maximum collector-emitter voltage of 4.7V, collector current of 50mA, and power dissipation of 200mW. The DC current gain is a minimum of 180 at 30mA, ensuring consistent amplification. The noise figure ranges from 0.8dB to 1.3dB across 1.8GHz to 6GHz, suitable for sensitive receiver front-ends.

 

The transistor is housed in a surface-mount SC-82A / SOT-343 package with supplier device package PG-SOT343-4. It is rated for a maximum junction temperature of 150°C and is intended for automated assembly in compact RF modules.

BF776H6327 Quick Information

Product Type: RF Bipolar Junction Transistor
Canonical Name: NPN RF Transistor
Subcategory: Low-Noise RF Transistor

BF776H6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BF776H6327 Features

  • NPN RF transistor with 46GHz transition frequency.
  • Low noise figure of 0.8dB to 1.3dB.
  • Max collector current of 50mA and 200mW power dissipation.
  • Surface mount package (SC-82A, SOT-343).
  • High DC current gain min 180 at 30mA.

BF776H6327 Applications

  • Ideal for low-noise RF amplifier circuits.
  • Suitable for wireless communication front-ends.
  • Used in RF signal conditioning up to 6GHz.
  • Applicable in oscillator and mixer stages.

BF776H6327 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range?

Maximum junction temperature is 150°C.

What is the package type?

SC-82A, SOT-343 surface mount package.

Is this component RoHS compliant?

The part is listed as RoHS3 Compliant (unverified).

What is the maximum collector-emitter voltage (VCEO)?

4.7V.

What is the transition frequency (fT)?

46 GHz typical.

What is the noise figure?

0.8dB to 1.3dB over 1.8GHz to 6GHz.

What is the DC current gain (hFE)?

Minimum 180 at 30mA, 3V.

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