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BF721T1G The On Semiconductor BF721T1G is a PNP bipolar transistor designed for general-purpose applications. It features a 300V breakdown voltage and 50mA continuous collector current.
Mfr Part #:

BF721T1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor BF721T1G is a PNP bipolar transistor designed for general-purpose applications. It features a 300V breakdown voltage and 50mA continuous collector current.
Total Stock: 2,370 pcs

BF721T1G Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,000 pcs
2000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
370 pcs
370 pcs On Request 1 On Request On Request 1970-01-01 00:12:17 On Request On Request

BF721T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current
Collector-Emitter Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Power Dissipation (Max)
Supplier Device Package
Transistor Type
Transition Frequency (fT)
Vce Saturation (Max) @ Ib, Ic
Voltage

BF721T1G Description

Short technical summary and product information.

The BF721T1G from ON Semiconductor is a PNP bipolar junction transistor (BJT) housed in a SOT-223 (TO-261) surface-mount package. This device is rated for a maximum collector-emitter voltage of 300V and a continuous collector current of 50mA, with a maximum power dissipation of 1.5W.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 50 at 25mA and 20V, and a Vce saturation voltage of 800mV at 5mA collector current and 30mA base current. The transistor has a transition frequency (fT) of 60MHz.

 

Designed for surface mounting, the SOT-223 package is suitable for automated assembly processes. The operating temperature range for this transistor is -65°C to 150°C.

 

This component is often used in switching and amplification circuits where a high voltage PNP transistor is required.

BF721T1G Quick Information

Product Type: Bipolar Transistor
Series: BF721
Canonical Name: BF721T1G PNP Bipolar Transistor
Subcategory: Single

BF721T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BF721T1G Features

  • PNP bipolar junction transistor
  • 300V collector-emitter voltage
  • 50mA continuous collector current
  • 1.5W maximum power dissipation
  • 60MHz transition frequency

BF721T1G Applications

  • General purpose switching applications
  • Signal amplification circuits
  • High voltage PNP applications

BF721T1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range for the BF721T1G transistor?

The operating temperature range is -65°C to 150°C.

What package type is the BF721T1G transistor supplied in?

The BF721T1G is supplied in a SOT-223 (TO-261) package, designed for surface mounting.

Is the BF721T1G transistor RoHS compliant?

Yes, the BF721T1G is RoHS3 compliant.

What is the maximum collector-emitter voltage for the BF721T1G?

The maximum collector-emitter voltage is 300V.

What is the maximum continuous collector current for the BF721T1G?

The maximum continuous collector current is 50mA.

What is the minimum DC current gain (hFE) of the BF721T1G?

The minimum DC current gain (hFE) is 50 at 25mA collector current and 20V collector-emitter voltage.

What is the transition frequency (fT) of the BF721T1G?

The transition frequency (fT) is 60MHz.

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