| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,232 pcs
|
4232 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request | |
|
1,416 pcs
|
1416 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request | |
|
450 pcs
|
450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Collector Current (Ic) | |
| Collector-Base Breakdown Voltage (V(BR)CBO) | |
| Collector-Base Cutoff Current (ICBO) | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Breakdown Voltage (V(BR)CEO) | |
| Collector-Emitter Breakdown Voltage (V(BR)CER) | |
| Collector-Emitter Voltage (VCEO) | |
| Collector-Emitter Voltage (VCER) | |
| Emitter-Base Breakdown Voltage (V(BR)EBO) | |
| Emitter-Base Voltage (VEBO) | |
| Halogen Free | |
| ICER (Maximum @ VCE = 200 V, RBE = 2.7 kΩ, TJ = 150 °C) | |
| ICER (Maximum @ VCE = 250 V, RBE = 2.7 kΩ) | |
| Industrial Grade | |
| Junction Temperature (TJ) | |
| Lead Style | |
| Lifecycle Status | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Qualification | |
| Storage Temperature | |
| Storage Temperature Range | |
| Termination Style | |
| Thermal Resistance Junction-to-Ambient | |
| Total Power Dissipation (Pd) |
The BF720T1 is an NPN silicon transistor designed for high-voltage switching and amplification applications. It features a maximum collector-emitter voltage (VCEO) of 300V and a continuous collector current rating of 100mA. The device can dissipate up to 1.5W at 25°C ambient temperature when mounted on a standard glass epoxy PCB with a specified collector pad area.
This transistor is housed in a compact SOT-223 (TO-261) surface-mount package with gull-wing leads, suitable for automated assembly. It is offered in Pb-free, halogen-free/BFR-free versions and is RoHS compliant. The S-prefix variants (SBF720T1G) are AEC-Q101 qualified and PPAP capable, making them suitable for automotive applications.
Electrical characteristics include low leakage currents: collector-base cutoff current (ICBO) of 10nA maximum at 200V, and collector-emitter cutoff current (ICER) of 50nA maximum at 250V. The thermal resistance junction-to-ambient (RθJA) is 83.3°C/W under the specified mounting conditions.
Note: This device is discontinued and not recommended for new designs. Please contact On Semiconductor for replacement options.
| Qty | Low | High |
|---|---|---|
| 699+ | $0.43 | $0.43 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 300V.
The maximum collector current (IC) is 100mA.
The total power dissipation (PD) is 1.5W at 25°C ambient temperature.
It is available in a surface-mount SOT-223 (TO-261) package with gull-wing leads.
Yes, the device is RoHS compliant, Pb-free, and halogen-free/BFR-free as per the datasheet.
The S-prefix variants (SBF720T1G) are AEC-Q101 qualified and PPAP capable.
The thermal resistance junction-to-ambient (RθJA) is 83.3°C/W when mounted on a glass epoxy PCB with a specified pad area.