BF545C,215

The BF545C,215 from NXP Semiconductors is an N-channel symmetrical silicon junction field-effect transistor (JFET) designed for a variety of RF and analog applications. Key electrical parameters include a maximum drain-source voltage of ±30 V, a drain current range of 12 mA to 25 mA (at VGS=0 V, VDS=15 V), and a forward transfer admittance of 3 mS to 6.5 mS. The gate-source cut-off voltage ranges from -0.4 V to -7.8 V. This device is characterized by low leakage current (typ. 500 fA) and high gain, making it suitable for low-noise amplifier stages. It is commonly used in impedance converters for electret microphones and infrared detectors, as well as VHF amplifiers, oscillators, and mixers. The transistor is housed in a SOT-23 (TO-236-3) surface mount package, which is well-suited for compact PCB layouts. The device is sensitive to electrostatic discharge (ESD) and requires proper handling precautions. The operating junction temperature range is -65°C to +150°C, with a maximum total power dissipation of 250 mW at 25°C ambient. The BF545C,215 is part of the BF545 family, offering a higher drain current range compared to the BF545A and BF545B variants.