| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
60,000 pcs
|
60000 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
60 pcs
|
60 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current Drain (Id) | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Voltage |
The BF510 is an N-Channel Junction Field-Effect Transistor (JFET) from NXP Semiconductors. It features a drain-to-source voltage (Vdss) of 20V and a drain current (Id) of 30mA. The typical drain current (Idss) is 3mA at Vds=10V.
The device has a maximum input capacitance (Ciss) of 5pF at Vds=10V, making it suitable for high-frequency applications. Power dissipation is rated at 250mW, with a maximum junction temperature of 150°C.
The BF510 is designed for surface-mount assembly and is available in the TO-236-3, SC-59, and SOT-23-3 package variants, with the supplier device package being TO-236AB. This compact package is ideal for space-constrained designs.
The drain-to-source voltage (Vdss) is 20V.
The BF510 is available in TO-236-3, SC-59, and SOT-23-3 packages, with the supplier device package being TO-236AB.
The maximum junction temperature is 150°C.
The BF510 is listed as RoHS3 Compliant, but this status is unverified.
The typical Idss is 3mA at Vds=10V.
The maximum input capacitance (Ciss) is 5pF at Vds=10V.
The power dissipation is 250mW.