| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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68,000 pcs
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68000 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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The BF5020WH6327 is an N-Channel RF MOSFET manufactured by Infineon Technologies. It is designed for RF applications requiring low noise and high gain. The device offers a drain-source voltage rating of 5V and a drain current of 10 mA. It features a typical gain of 32 dB and a noise figure of 1.2 dB at 800 MHz. The MOSFET is housed in a surface-mount SC-82A/SOT-343 package (PG-SOT343-4-1). It is RoHS3 compliant and has an MSL of 1 (unlimited). This component is suitable for use in RF amplifier stages and other high-frequency circuits.
The drain-source voltage is 5V.
SC-82A, SOT-343 (PG-SOT343-4-1).
Yes, RoHS3 compliant (unverified).
32 dB.
1.2 dB typical at 800 MHz.
10 mA.
N-Channel.