| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,300 pcs
|
2300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation | |
| Storage Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Voltage |
The BF494 is an NPN RF transistor designed for low-power RF amplification and switching applications. It features a maximum collector-emitter voltage (VCEO) of 20V, collector-base voltage (VCBO) of 30V, and emitter-base voltage (VEBO) of 5V. The continuous collector current is rated at 30mA, with a DC current gain (hFE) ranging from 67 to 222 at VCE=10V and IC=1mA. The collector-emitter saturation voltage is typically 0.2V at 10mA base current, ensuring low power loss.
This transistor can dissipate up to 350mW of power with a junction temperature of 150°C. It operates over a storage temperature range of -55°C to 150°C and an operating junction temperature of 150°C. The device is through-hole mounted in a TO-92-3 package (TO-226-3), which is commonly used for general-purpose transistors.
The BF494 is suitable for RF amplifier stages, oscillators, and low-power switching circuits. Its high gain bandwidth makes it appropriate for VHF applications. The datasheet originates from Fairchild Semiconductor, now part of onsemi.
| Qty | Low | High |
|---|---|---|
| 2,000+ | $0.19 | $0.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
TO-92-3 (TO-226-3) through-hole package.
Junction temperature up to 150°C, storage temperature -55 to 150°C.
RoHS3 compliant (unverified).
67 to 222 at VCE=10V, IC=1mA.
30 mA continuous.
Through hole.