| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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60 pcs
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60 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BF470 from Philips Semiconductors is a PNP transistor designed for high-voltage applications. It features a low feedback capacitance, making it suitable for class-B video output stages in television receivers and high-voltage IF output stages.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 250V and a peak collector current (ICM) of 100mA. The DC current gain (hFE) is a minimum of 50 under specified conditions. The transistor also has a feedback capacitance (Cre) of up to 1.8pF at 1MHz and a transition frequency (fT) of at least 60MHz.
Packaged in a TO-126 (SOT32) plastic case, the BF470 is designed for through-hole mounting. Thermal considerations include a total power dissipation of 1.8W at a mounting base temperature of 114°C. The operating and storage temperatures range from -65°C to +150°C.
NPN complements BF469 and BF471 are available for complementary designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.52 | $0.52 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BF470 is 250V.
The peak collector current (ICM) for the BF470 is 100mA.
The DC current gain (hFE) of the BF470 is a minimum of 50 at IC = -25 mA and VCE = -20 V.
The feedback capacitance (Cre) of the BF470 is a maximum of 1.8pF at 1 MHz.
The BF470 transistor is supplied in a TO-126 (SOT32) plastic package.
The BF470 is typically used in class-B video output stages for television receivers and for high-voltage IF output stages.