| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
21 pcs
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21 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Power Dissipation | |
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| Thermal Resistance |
The BF469 series devices are silicon, complementary high voltage power transistors designed for Class-B video output stages in television receivers and for high voltage IF output stages.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 300V and a continuous collector current (IC) of 50mA. The device also features a maximum power dissipation (PD) of 1.25W and a transition frequency (fT) of 60MHz.
This transistor is housed in a TO-126 package, suitable for through-hole mounting. The operating and storage junction temperature range is -65 to +150°C.
Complementary PNP devices are also available in the BF470/BF472 series.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BF469 is 300V.
The continuous collector current (IC) for the BF469 is 50mA.
The power dissipation (PD) for the BF469 is 1.25W.
The operating and storage junction temperature range for the BF469 is -65 to +150°C.
The BF469 is supplied in a TO-126 package.
The standard package quantity for the BF469 is 1000 pieces.