BF423ZL1G BF423ZL1G is a PNP bipolar junction transistor from onsemi with a 250V collector-emitter breakdown voltage and 500mA collector current. It is housed in a through-hole TO-92 package.
Mfr Part #:

BF423ZL1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
BF423ZL1G is a PNP bipolar junction transistor from onsemi with a 250V collector-emitter breakdown voltage and 500mA collector current. It is housed in a through-hole TO-92 package.
Total Stock: 2,000 pcs
$ Price Range: $0.03 - $0.05

BF423ZL1G Available from 1 distributor

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2,000 pcs
2000 pcs On Request 1 On Request On Request On Request On Request On Request

BF423ZL1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Style
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BF423ZL1G Description

Short technical summary and product information.

The BF423ZL1G is a PNP bipolar junction transistor manufactured by onsemi (formerly ON Semiconductor). It features a collector-emitter breakdown voltage of 250 V and a collector current rating of 500 mA, making it suitable for medium-voltage switching and amplification applications.

 

This transistor offers a DC current gain (hFE) of 50 minimum at 25 mA collector current and 20 V collector-emitter voltage. The collector-emitter saturation voltage is 500 mV maximum at a base current of 2 mA and collector current of 20 mA. It has a transition frequency of 60 MHz.

 

The device is designed for through-hole mounting and is supplied in a TO-226-3, TO-92-3 Long Body (Formed Leads) package, with the supplier device package designated as TO-92 (TO-226). It can dissipate up to 830 mW of power and operates over a junction temperature range of -55°C to 150°C.

BF423ZL1G Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: BF423ZL1G PNP Bipolar Junction Transistor
Subcategory: Single BJT

BF423ZL1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BF423ZL1G Estimated Pricing

Qty Low High
1+ $0.05 $0.05
10+ $0.05 $0.05
100+ $0.04 $0.04
500+ $0.04 $0.04
1,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

BF423ZL1G Features

  • PNP bipolar junction transistor design.
  • 250V collector-emitter breakdown voltage.
  • 500mA collector current rating.
  • Through-hole TO-92 package.
  • 60 MHz transition frequency.

BF423ZL1G Applications

  • Medium voltage switching circuits.
  • General purpose amplification stages.
  • Driver circuits for relays and solenoids.
  • Linear voltage regulator pass element.

BF423ZL1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the BF423ZL1G?

The collector-emitter breakdown voltage is 250 V.

What is the maximum collector current for the BF423ZL1G?

The maximum collector current is 500 mA.

What package type is the BF423ZL1G available in?

It is available in a through-hole TO-226-3, TO-92-3 Long Body (Formed Leads) package, also designated as TO-92 (TO-226).

What is the operating temperature range for the BF423ZL1G?

The operating junction temperature range is -55°C to 150°C.

Is the BF423ZL1G RoHS compliant?

Yes, the datasheet indicates it is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free.

What is the DC current gain (hFE) of the BF423ZL1G?

The minimum DC current gain is 50 at a test condition of Ic=25mA and Vce=20V.

What is the power dissipation of the BF423ZL1G?

The power dissipation is 830 mW.

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