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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BF423ZL1G is a PNP bipolar junction transistor manufactured by onsemi (formerly ON Semiconductor). It features a collector-emitter breakdown voltage of 250 V and a collector current rating of 500 mA, making it suitable for medium-voltage switching and amplification applications.
This transistor offers a DC current gain (hFE) of 50 minimum at 25 mA collector current and 20 V collector-emitter voltage. The collector-emitter saturation voltage is 500 mV maximum at a base current of 2 mA and collector current of 20 mA. It has a transition frequency of 60 MHz.
The device is designed for through-hole mounting and is supplied in a TO-226-3, TO-92-3 Long Body (Formed Leads) package, with the supplier device package designated as TO-92 (TO-226). It can dissipate up to 830 mW of power and operates over a junction temperature range of -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.05 | $0.05 |
| 10+ | $0.05 | $0.05 |
| 100+ | $0.04 | $0.04 |
| 500+ | $0.04 | $0.04 |
| 1,000+ | $0.03 | $0.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 250 V.
The maximum collector current is 500 mA.
It is available in a through-hole TO-226-3, TO-92-3 Long Body (Formed Leads) package, also designated as TO-92 (TO-226).
The operating junction temperature range is -55°C to 150°C.
Yes, the datasheet indicates it is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free.
The minimum DC current gain is 50 at a test condition of Ic=25mA and Vce=20V.
The power dissipation is 830 mW.