| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30 pcs
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30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current Rating | |
| Power Dissipation |
The BF256C is an N-Channel Silicon Field-Effect Transistor (FET) manufactured by Unknown Manufacturer. It is housed in a standard TO-92 package and designed for through-hole mounting.
Key electrical specifications include a drain-source voltage rating of 30V and a current rating of 18mA. The device has a maximum power dissipation of 300mW, with a typical power dissipation of 350mW. The operating temperature range spans from -55°C to 150°C.
This FET is suitable for various electronic applications requiring N-channel amplification or switching. Its TO-92 package and through-hole mounting make it compatible with traditional PCB assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage of the BF256C is 30V.
The current rating of the BF256C is 18mA.
The maximum power dissipation of the BF256C is 300mW.
The typical power dissipation of the BF256C is 350mW.
The DC voltage rating of the BF256C is -30V.
The BF256C operates from a minimum of -55°C to a maximum of 150°C.
The BF256C is supplied in a TO-92 package.