| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,750 pcs
|
3750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Configuration | |
| Current Rating (Amps) | |
| Halogen Free | |
| Industrial Grade | |
| Lead Spacing | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Voltage |
The BF256C is an N-Channel JFET from On Semiconductor, originally designed by Fairchild Semiconductor. It is intended for VHF/UHF RF amplifier applications. Key electrical specifications include a maximum drain-gate voltage of 30V, a maximum gate-source voltage of -30V, and a zero-gate voltage drain current (IDSS) ranging from 11mA to 18mA. The typical forward transconductance is 4.5 mS, making it suitable for low-noise amplification stages.
The device is packaged in a TO-92 through-hole package (TO-226-3, TO-92-3) with a lead spacing of 1.27mm. It can dissipate up to 350mW at 25°C ambient temperature, with derating above 25°C. The operating and storage temperature range is -55°C to 150°C.
This JFET is sourced from process 50 and is commonly used in consumer and professional RF equipment. The part is RoHS3 compliant (unverified) and has an MSL of 1 (unlimited).
30V.
Maximum -30V; cutoff voltage -0.5V to -8V.
11mA to 18mA.
4.5 mS.
-55°C to 150°C.
TO-92 (TO-226-3, TO-92-3) through-hole package.
RoHS3 Compliant (unverified).