| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3 pcs
|
3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BF245C is an N-Channel Junction Field-Effect Transistor (JFET) from On Semiconductor, originally sourced from Fairchild Semiconductor. It is specifically designed for VHF/UHF amplifier applications, offering high input impedance and low noise. The device features a maximum drain-gate voltage of 30V and a maximum gate-source voltage of -30V. The drain current (IDSS) ranges from 12mA to 25mA, with a common source forward transconductance of 3 to 6.5 mmho. The gate-source cut-off voltage (VGS(off)) is between -0.5V and -8V. The BF245C is housed in a through-hole TO-92 package (also known as TO-226-3), making it suitable for prototyping and traditional PCB assembly. With a maximum power dissipation of 350mW at 25°C ambient temperature and an operating junction temperature range of -55°C to 150°C, it is robust for various RF circuit designs. The BF245C is the highest IDSS grade in the BF245 series, ideal for applications requiring higher current handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.35 | $3.35 |
| 5+ | $3.17 | $3.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
TO-92-3 (also known as TO-226-3).
-55°C to 150°C.
The part is listed as RoHS3 compliant, but this status is unverified.
Maximum drain current is 25mA.
3 to 6.5 mmho.
350mW at 25°C ambient temperature.