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251 pcs
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251 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BF245 is an N-channel silicon field-effect transistor (JFET) manufactured by Texas Instruments, available in a TO-92 package. It is primarily designed for use as an amplifier in the VHF and UHF frequency bands, as well as an audio frequency amplifier.
This JFET offers high gain and low noise characteristics, making it suitable for amplifying small signals with effective noise filtration. Key electrical specifications include a maximum Drain to Source Voltage (Vds) of 30V, a maximum Continuous Drain Current (Id) of 25mA, and a maximum Power Dissipation (Pd) of 300mW. The Gate to Source Cutoff Voltage (Vgs(off)) ranges from -0.5V to -0V.
The BF245 operates effectively at frequencies up to 700 MHz. It is housed in a through-hole TO-92 package, facilitating easy mounting on PCBs. The operating temperature range is from -55°C to +150°C.
This transistor is part of a series that includes BF245A, BF245B, and BF245C, which differ slightly in Gate-Source voltage and Zero-Gate Voltage Drain Current.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the BF245 is 30V.
The maximum continuous drain current (Id) for the BF245 is 25mA.
The maximum power dissipation (Pd) for the BF245 is 300mW.
The BF245 can operate in a temperature range from -55°C to +150°C.
The BF245 is available in a TO-92 package.
The gate-source cutoff voltage (Vgs(off)) for the BF245 ranges from -0.5V to -0V.
The BF245 is effective at frequencies up to 700 MHz.