| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,318 pcs
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1318 pcs | On Request | 1 | 1151 | On Request | 92 | On Request | On Request |
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The BF244B is an N-Channel JFET from On Semiconductor, optimized for RF amplifier and mixer circuits operating up to 450 MHz. It is part of the BF244 series and is sourced from Process 50. Key absolute maximum ratings include a drain-gate voltage of 30 V, gate-source voltage of -30 V, drain current of 50 mA, and total device dissipation of 350 mW at 25°C (derate above 25°C at 2.8 mW/°C).
Electrical characteristics at VDS = 15 V and VGS = 0 V include a zero-gate voltage drain current (IDSS) range of 6.0 to 15 mA for the BF244B variant. Forward transfer admittance (yfs) is typically 5.6 mmhos at 1 kHz and 200 MHz, with a minimum of 3.0 mmhos and maximum of 6.5 mmhos at 1 kHz. Output admittance is typically 40 µmhos, and reverse transfer admittance is 1.0 µmhos at 200 MHz. Capacitances are low: input capacitance 3.0 pF, reverse transfer 0.7 pF, and output 0.9 pF. Typical noise figure is 1.5 dB at 100 MHz with a 1.0 kΩ source resistance. The cut-off frequency is typically 700 MHz.
The device is housed in a through-hole TO-92 package (TO-226-3, TO-226AA) with a supplier device package of TO-92-3. Thermal resistance is 125°C/W junction-to-case and 357°C/W junction-to-ambient. Storage temperature range is -55 to +150°C.
30 V.
50 mA.
350 mW at 25°C, derate above 25°C at 2.8 mW/°C.
1.5 dB at VDS=15V, VGS=0V, RG=1.0kΩ, f=100MHz.
TO-226-3, TO-92-3 (TO-226AA) through-hole package.
RoHS3 Compliant (unverified).
-0.5 V to -8.0 V at VDS=15V, ID=10nA.