BF244B BF244B is an N-Channel JFET designed for RF amplifier and mixer applications up to 450 MHz. It features a 30V drain-gate voltage, 50mA drain current, and 350mW power dissipation in a TO-92 package.
Mfr Part #:

BF244B

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
BF244B is an N-Channel JFET designed for RF amplifier and mixer applications up to 450 MHz. It features a 30V drain-gate voltage, 50mA drain current, and 350mW power dissipation in a TO-92 package.
✓ Total Stock: 1,318 pcs

BF244B Available from 1 distributor

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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1,318 pcs
1318 pcs On Request 1 1151 On Request 92 On Request On Request

BF244B Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current Rating (Amps)
Frequency
Mounting Type
Noise Figure
Storage Temperature
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BF244B Description

Short technical summary and product information.

The BF244B is an N-Channel JFET from On Semiconductor, optimized for RF amplifier and mixer circuits operating up to 450 MHz. It is part of the BF244 series and is sourced from Process 50. Key absolute maximum ratings include a drain-gate voltage of 30 V, gate-source voltage of -30 V, drain current of 50 mA, and total device dissipation of 350 mW at 25°C (derate above 25°C at 2.8 mW/°C).

 

Electrical characteristics at VDS = 15 V and VGS = 0 V include a zero-gate voltage drain current (IDSS) range of 6.0 to 15 mA for the BF244B variant. Forward transfer admittance (yfs) is typically 5.6 mmhos at 1 kHz and 200 MHz, with a minimum of 3.0 mmhos and maximum of 6.5 mmhos at 1 kHz. Output admittance is typically 40 µmhos, and reverse transfer admittance is 1.0 µmhos at 200 MHz. Capacitances are low: input capacitance 3.0 pF, reverse transfer 0.7 pF, and output 0.9 pF. Typical noise figure is 1.5 dB at 100 MHz with a 1.0 kΩ source resistance. The cut-off frequency is typically 700 MHz.

 

The device is housed in a through-hole TO-92 package (TO-226-3, TO-226AA) with a supplier device package of TO-92-3. Thermal resistance is 125°C/W junction-to-case and 357°C/W junction-to-ambient. Storage temperature range is -55 to +150°C.

BF244B Quick Information

Product Type: JFET RF Transistor
Series: BF244
Canonical Name: BF244B N-Channel RF Amplifier JFET
Subcategory: RF Amplifier

BF244B Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BF244B Features

  • N-Channel JFET for RF amplification.
  • 30V maximum drain-gate voltage.
  • 50mA maximum drain current.
  • 350mW power dissipation at 25°C.
  • Low noise figure of 1.5 dB typical.

BF244B Applications

  • RF amplifier circuits up to 450 MHz.
  • Mixer applications in RF systems.
  • Analog switching requiring low capacitance.
  • Low-noise front-end designs.

BF244B FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-gate voltage?

30 V.

What is the maximum drain current?

50 mA.

What is the power dissipation?

350 mW at 25°C, derate above 25°C at 2.8 mW/°C.

What is the typical noise figure?

1.5 dB at VDS=15V, VGS=0V, RG=1.0kΩ, f=100MHz.

What package is available?

TO-226-3, TO-92-3 (TO-226AA) through-hole package.

Is it RoHS compliant?

RoHS3 Compliant (unverified).

What is the gate-source cutoff voltage range?

-0.5 V to -8.0 V at VDS=15V, ID=10nA.

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