| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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117 pcs
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117 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BF240 is an NPN RF Transistor manufactured by NXP Semiconductors. This component is designed for RF applications and features a Collector-Emitter Voltage (VCEO) of 40V and a continuous Collector Current (IC) of 50mA.
Key electrical characteristics include a DC Current Gain (hFE) ranging from 65 to 225, a Collector-Emitter Saturation Voltage (VCE(sat)) of 0.65V, and a Base-Emitter Saturation Voltage (VBE(sat)) of 0.74V. The Current Gain Bandwidth Product (fT) is specified at 1100 MHz under test conditions of IC = 7.0mA and VCE = 10V.
This transistor is housed in a TO-92 package and is designed for through-hole mounting. The operating and storage junction temperature range is from -55°C to 150°C. Thermal characteristics include a Total Device Dissipation (PD) of 350mW and a Junction to Ambient thermal resistance (RθJA) of 357 °C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the BF240 is 40V.
The continuous Collector Current (IC) rating for the BF240 is 50mA.
The operating and storage junction temperature range for the BF240 is -55°C to 150°C.
The Current Gain Bandwidth Product (fT) of the BF240 is 1100 MHz.
The BF240 is supplied in a TO-92 package.
The BF240 transistor is designed for through-hole mounting.
The maximum operating temperature for the BF240 is 70°C.