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27 pcs
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27 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BF233-2 is a silicon planar epitaxial NPN transistor manufactured by Texas Instruments, suitable for AM mixer/oscillator stages and AM-FM IF amplifier applications. It is housed in a TO-18 epoxy package.
Key electrical specifications include a collector-emitter breakdown voltage of 30V and a maximum collector current of 50mA. The device can operate at temperatures up to 125°C. It also has a maximum power dissipation of 200mW and a maximum collector-to-base leakage current (ICBO) of 100uA at a V(CBO) of 30V.
This transistor is designed for use in high-frequency applications, with an original frequency specification of 500MHz. The TO-18 through-hole mounting package makes it suitable for various circuit designs where discrete components are preferred.
While specific details on lead-free and halogen-free compliance are not explicitly stated in the provided data, the RoHS status is listed as compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum operating temperature for the BF233-2 transistor is 125°C.
The collector-emitter breakdown voltage of the BF233-2 is 30V.
The maximum collector current for the BF233-2 is 50mA.
The BF233-2 transistor is supplied in a TO-18 package.
The RoHS status of the BF233-2 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BF233-2 is 1.