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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BF233 is a silicon planar epitaxial NPN transistor manufactured by STMicroelectronics. It is designed for use in AM mixer/oscillator stages and IF amplifier applications.
Key electrical specifications include a collector-emitter breakdown voltage (VCEO) of 30V and a collector-base breakdown voltage (VCBO) of 30V. The maximum collector current (IC Max.) is 50mA, with a maximum power dissipation of 200mW. The transistor can operate at temperatures up to 125°C.
This transistor is housed in a TO-18 package, typically suited for through-hole mounting. Its frequency capability is up to 500MHz, making it suitable for RF applications.
The BF233 is part of the broader category of discrete semiconductor products, specifically within transistors.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (VCEO) for the BF233 transistor is a minimum of 30V.
The maximum collector current (IC Max.) for the BF233 transistor is 50mA.
The maximum operating temperature for the BF233 transistor is 125°C.
The BF233 is an NPN bipolar transistor.
The BF233 transistor comes in a TO-18 package.