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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STMicroelectronics BF178 is a silicon NPN transistor designed for general-purpose amplifier applications. It is supplied in a hermetically sealed TO-39 package, suitable for through-hole mounting.
Key electrical characteristics include a maximum Collector-Emitter Voltage (V_CER) of 185V and a maximum Continuous Collector Current (I_C) of 50mA. The device can dissipate up to 1.7W of power at 25°C ambient temperature. The operating and storage junction temperature range is from -65°C to +200°C.
Electrical specifications include a minimum DC Current Gain (hFE) of 20 at V_CE=20V and I_C=30mA, and a typical Transition Frequency (fT) of 120 MHz at V_CE=10V and I_C=10mA. The Base-Emitter On Voltage (V_BE(ON)) is a maximum of 1.2V under specific test conditions.
This transistor is suitable for various amplification tasks where its specific voltage, current, and frequency characteristics meet design requirements. The TO-39 package offers robust thermal and mechanical properties for demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (V_CER) for the BF178 transistor is 185V.
The maximum Continuous Collector Current (I_C) for the BF178 transistor is 50mA.
The power dissipation rating of the BF178 transistor is 1.7W at 25°C.
The operating and storage junction temperature range for the BF178 transistor is -65°C to +200°C.
The BF178 transistor is supplied in a TO-39 package.