| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | 08+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature | |
| Mounting Type | |
| Noise Figure | |
| SVHC Present |
The BF1212 is an N-channel dual-gate MOS-FET manufactured by NXP Semiconductors, suitable for gain-controlled low noise VHF and UHF amplifiers in 5V digital and analog television tuner applications.
Key electrical specifications include a drain-source voltage (Vds) of 6V, a drain current (Id) of 30mA, and a total power dissipation (Ptot) of 180mW. It offers a typical forward transfer admittance (yfs) of 33mS and a typical input capacitance (Ciss) of 1.7pF at gate 1. The reverse transfer capacitance (Crss) is 15fF at 1 MHz, and the noise figure (NF) is a low 1.1dB at 800 MHz. Cross-modulation performance is rated at 104 dBµV.
This enhancement-type field-effect transistor has integrated diodes between gates and source for protection against voltage surges. It is encapsulated in a SOT143B plastic surface-mounted package. The maximum junction temperature (Tj) is 150°C.
Applications include low noise amplifiers where gain control is required, benefiting from its internal self-biasing circuit for good cross-modulation and DC stabilization.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
6 V.
30 mA.
1.1 dB.
SOT143B surface mount.
150 °C.
1.7 pF.