| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
87,000 pcs
|
87000 pcs | On Request | 1 | On Request | On Request | 0024+ | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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The BF 770A E6327 is an NPN RF bipolar junction transistor from Infineon Technologies designed for high-frequency amplification applications. It features a maximum collector-emitter breakdown voltage of 12V and a maximum collector current of 90mA, with a typical transition frequency of 6GHz. The device offers a typical noise figure ranging from 1.5dB to 2.6dB at frequencies between 900MHz and 1.8GHz, and a typical power gain of 9.5dB to 14.5dB. The minimum DC current gain is 70 at Ic=30mA and Vce=8V. Maximum power dissipation is 300mW. The transistor is housed in a surface mount PG-SOT23 package, also known as TO-236-3 or SC-59. It can operate at junction temperatures up to 150°C.
| Qty | Low | High |
|---|---|---|
| 9,000+ | $0.06 | $0.06 |
| 15,000+ | $0.06 | $0.06 |
| 21,000+ | $0.06 | $0.06 |
| 30,000+ | $0.05 | $0.05 |
| 75,000+ | $0.05 | $0.05 |
| 150,000+ | $0.05 | $0.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
12V
6 GHz typical
Surface mount SOT23-3 (also TO-236-3, SC-59, PG-SOT23)
150°C