BF 770A E6327 NPN RF bipolar junction transistor. 12V collector-emitter breakdown voltage, 90mA collector current, 6GHz transition frequency, 300mW power dissipation. Surface mount SOT23-3 package.
Mfr Part #:

BF 770A E6327

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
NPN RF bipolar junction transistor. 12V collector-emitter breakdown voltage, 90mA collector current, 6GHz transition frequency, 300mW power dissipation. Surface mount SOT23-3 package.
✓ Total Stock: 87,000 pcs
$ Price Range: $0.05 - $0.06

BF 770A E6327 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
87,000 pcs
87000 pcs On Request 1 On Request On Request 0024+ On Request On Request

BF 770A E6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Mounting Type
Noise Figure (dB Typ @ f)
Operating Temperature
Power
Supplier Device Package
Transistor Type
Voltage

BF 770A E6327 Description

Short technical summary and product information.

The BF 770A E6327 is an NPN RF bipolar junction transistor from Infineon Technologies designed for high-frequency amplification applications. It features a maximum collector-emitter breakdown voltage of 12V and a maximum collector current of 90mA, with a typical transition frequency of 6GHz. The device offers a typical noise figure ranging from 1.5dB to 2.6dB at frequencies between 900MHz and 1.8GHz, and a typical power gain of 9.5dB to 14.5dB. The minimum DC current gain is 70 at Ic=30mA and Vce=8V. Maximum power dissipation is 300mW. The transistor is housed in a surface mount PG-SOT23 package, also known as TO-236-3 or SC-59. It can operate at junction temperatures up to 150°C.

BF 770A E6327 Quick Information

Product Type: RF Bipolar Junction Transistor
Canonical Name: BF 770A E6327 NPN RF Bipolar Junction Transistor
Subcategory: NPN

BF 770A E6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BF 770A E6327 Estimated Pricing

Qty Low High
9,000+ $0.06 $0.06
15,000+ $0.06 $0.06
21,000+ $0.06 $0.06
30,000+ $0.05 $0.05
75,000+ $0.05 $0.05
150,000+ $0.05 $0.05

Estimated market price range - modelled values for guidance only, not live distributor offers.

BF 770A E6327 Features

  • NPN RF transistor with 6GHz transition frequency.
  • Maximum collector-emitter voltage of 12V.
  • Typical noise figure from 1.5 to 2.6dB.
  • Surface mount SOT23-3 package.
  • 300mW maximum power dissipation.

BF 770A E6327 Applications

  • RF signal amplification in wireless devices.
  • Low-noise amplifiers for 900MHz-1.8GHz bands.
  • General purpose high-frequency switching circuits.

BF 770A E6327 FAQs

4 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (Vceo) of the BF 770A E6327?

12V

What is the transition frequency (ft) of this transistor?

6 GHz typical

What is the package type of the BF 770A E6327?

Surface mount SOT23-3 (also TO-236-3, SC-59, PG-SOT23)

What is the maximum operating junction temperature?

150°C

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