BF 1009SR E6327 The BF 1009SR E6327 is an RF N-Channel MOSFET from Infineon Technologies. It features 9V drain-source voltage, 25mA drain current, 800MHz frequency, 22dB gain, and 1.4dB noise figure in a SOT-143R surface mount package.
Mfr Part #:

BF 1009SR E6327

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The BF 1009SR E6327 is an RF N-Channel MOSFET from Infineon Technologies. It features 9V drain-source voltage, 25mA drain current, 800MHz frequency, 22dB gain, and 1.4dB noise figure in a SOT-143R surface mount package.
✓ Total Stock: 60,000 pcs

BF 1009SR E6327 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
60,000 pcs
60000 pcs On Request 1 On Request On Request 14+15+ On Request On Request

BF 1009SR E6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current Rating (Amps)
Frequency
Gain
Mounting Type
Noise Figure
Supplier Device Package
Technology
Voltage

BF 1009SR E6327 Description

Short technical summary and product information.

The BF 1009SR E6327 is an RF N-Channel MOSFET designed for high-frequency amplification applications. It operates with a drain-source voltage of 9V and a continuous drain current of 25mA, making it suitable for low-power RF circuits. The device provides a gain of 22dB and a noise figure of 1.4dB at 800MHz, enabling efficient signal amplification in receiver front-end stages. The MOSFET is housed in a SOT-143R surface mount package, which is compact and compatible with automated assembly processes. The supplier device package is PG-SOT-143R-3D. Environmental compliance includes RoHS3 compliance and MSL Level 1 (unlimited). This component is intended for use in wireless communication devices, portable RF equipment, and other high-frequency applications requiring low noise and moderate gain.

BF 1009SR E6327 Quick Information

Product Type: RF MOSFET
Series: BF1009
Canonical Name: Infineon Technologies BF 1009SR E6327 RF N-Channel MOSFET
Subcategory: RF MOSFET

BF 1009SR E6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BF 1009SR E6327 Features

  • RF N-Channel MOSFET for high-frequency amplification.
  • 9V drain-source voltage rating.
  • 25mA drain current capability.
  • 800MHz operating frequency with 22dB gain.
  • 1.4dB low noise figure.

BF 1009SR E6327 Applications

  • Ideal for RF low-noise amplifier circuits.
  • Used in receiver front-end signal processing.
  • Suitable for wireless communication devices.
  • Applicable in portable RF equipment.

BF 1009SR E6327 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the BF 1009SR E6327?

The drain-source voltage is 9V.

What is the package type of the BF 1009SR E6327?

The device is available in SOT-143R surface mount package.

Is the BF 1009SR E6327 RoHS compliant?

Yes, it is RoHS3 compliant.

What is the gain of the BF 1009SR E6327?

The gain is 22 dB.

What is the noise figure of the BF 1009SR E6327?

The noise figure is 1.4 dB.

What is the operating frequency of the BF 1009SR E6327?

The frequency is 800 MHz.

What is the drain current rating of the BF 1009SR E6327?

The drain current is 25 mA.

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