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8 pcs
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8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BDY58 is a high-performance NPN transistor manufactured by SEMELAB, utilizing a multiepitaxial planar process. It is designed for demanding switching and linear applications in military and industrial equipment.
Key electrical specifications include a maximum Collector-Base Voltage (VCBO) of 160V and a Collector-Emitter Voltage (VCEO) of 125V. The device can handle a continuous Collector Current (IC) of up to 25A and a Base Current (IB) of 6A. It offers a high Total Power Dissipation of 175W at 25°C case temperature and a low Thermal Resistance Junction-Case of 1°C/W.
Electrical characteristics include a minimum DC Current Gain (hFE) of 20 at 10A and a Transition Frequency (fT) of 7MHz. Switching times are also optimized, with a Turn-on Time of 1µs and a Turn-off Time of 2µs.
The BDY58 is supplied in the industry-standard TO-3 metal case, suitable for through-hole mounting. Its robust construction and high power handling capabilities make it suitable for various power supply and amplification circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BDY58 is 125V.
The BDY58 can handle a maximum continuous collector current (IC) of 25A.
The total power dissipation for the BDY58 at a case temperature of 25°C is 175W.
The BDY58 transistor is supplied in a TO-3 metal case.
The minimum DC current gain (hFE) for the BDY58 at 10A collector current and 4V collector-emitter voltage is 20.
The BDY58 has a maximum turn-on time of 1µs and a maximum turn-off time of 2µs.