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The BDY58 from Thomson-CSF is a high-performance silicon multiepitaxial planar NPN transistor. It is engineered for demanding switching and linear applications in military and industrial equipment.
Key electrical characteristics include a maximum collector-base voltage (VCBO) of 160V and a collector-emitter voltage (VCEO) of 125V. The transistor can handle a continuous collector current (IC) of up to 25A and a base current (IB) of 6A. It offers a maximum total power dissipation of 175W at 25°C case temperature.
With a thermal resistance junction-to-case of 1°C/W, the BDY58 is suitable for high-power operations. Its applications include switching and linear circuits where high current gain and fast switching speeds are required. The device is packaged in a standard TO-3 metal case, designed for through-hole mounting.
Electrical specifications include a minimum DC current gain (hFE) of 20 at 10A and a transition frequency (fT) of 7 MHz. Turn-on and turn-off times are rapid, with t_on at 1 µs and t_off at 2 µs, making it suitable for high-speed switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BDY58 transistor is 125V.
The BDY58 can handle a maximum continuous collector current (IC) of 25A.
The total power dissipation (Ptot) for the BDY58 at 25°C case temperature is 175W.
The BDY58 transistor is supplied in a TO-3 metal case.
The minimum DC current gain (hFE) for the BDY58 at an IC of 10A and VCE of 4V is 20.