Mfr Part #:

BDY56

Mfr Name: MEV

The BDY56 is a NPN silicon power transistor manufactured by MEV. It features a 120V collector-emitter voltage and a 15A collector current, housed in a TO-3 package.

✓ Total Stock: 5 pcs

$ Price Range: $1.87

BDY56 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Partservice ✓ Non-Authorised Inventory information	5 pcs On Request	5 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

BDY56 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	MEV
Junction Temperature	200 °C
Power Dissipation	117 Watts @ 25°C
Storage Temperature	-65 to +200 °C
Turn Off Time	2 µs
Turn On Time	0.5 µs

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BDY56 Description

Short technical summary and product information.

The BDY56 is a NPN silicon power transistor designed for high current applications. It offers a maximum collector-emitter voltage of 120V and a continuous collector current of 15A. The transistor has a power dissipation rating of 117 Watts at 25°C case temperature.

Key electrical characteristics include a collector-emitter saturation voltage of 2.5V at 10A and a base-emitter voltage of 1.8V at 4A. The static forward current transfer ratio (h21E) is a minimum of 10 at 10A collector current. The transition frequency (fT) is 10 MHz.

This power transistor is supplied in a TO-3 metal case, suitable for through-hole mounting. The junction temperature can reach up to 200°C, with storage temperatures ranging from -65°C to +200°C. Thermal resistance from junction to case is 1.5°C/W.

The BDY56 is suitable for various power amplification and switching applications where high current handling and voltage capability are required.

BDY56 Quick Information

Product Type: Transistor

Canonical Name: BDY56 NPN Silicon Power Transistor

Subcategory: NPN Silicon

BDY56 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

BDY56 Estimated Pricing

Qty	Low	High
1+	$1.87	$1.87

Estimated market price range - modelled values for guidance only, not live distributor offers.

BDY56 Features

120V collector-emitter voltage rating.
15A continuous collector current.
117W maximum power dissipation.
TO-3 metal case package.
High current transfer ratio.

BDY56 Applications

Suitable for power amplification.
Used in high current switching.
Ideal for power supply circuits.
Applicable in general purpose power.

BDY56 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum collector-emitter voltage for the BDY56?

The maximum collector-emitter voltage (VCEO) for the BDY56 is 120V.

What is the maximum continuous collector current for the BDY56?

The BDY56 can handle a maximum continuous collector current (IC) of 15A.

What is the power dissipation of the BDY56 at 25°C?

The power dissipation (PTOT) for the BDY56 is 117 Watts at a case temperature of 25°C.

What is the junction temperature range for the BDY56?

The junction temperature (TJ) for the BDY56 can be up to 200°C.

What is the thermal resistance of the BDY56 from junction to case?

The thermal resistance (RthJ-C) for the BDY56 is 1.5°C/W.

What is the collector-emitter saturation voltage of the BDY56 at 10A?

The collector-emitter saturation voltage (VCE(SAT)) for the BDY56 is a maximum of 2.5V when the collector current is 10A and base current is 3.3A.

What is the package type for the BDY56 transistor?

The BDY56 transistor comes in a TO-3 case.