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240 pcs
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240 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BDY26 from Thomson-CSF is a high-current NPN silicon transistor housed in a TO-3 metal package. This device is suitable for various power switching and amplification applications.
Key electrical specifications include a maximum Collector-Emitter Voltage (Vceo) of 180V and a maximum Collector Current (Ic) of 6A. The DC Current Gain (Hfe) ranges from 15 to 180, and it has a transition frequency (fT) of 10MHz. The maximum power dissipation is rated at 87.5W.
Designed for reliability, the BDY26 is built with a diffused mesa technology. Its TO-3 packaging facilitates efficient heat dissipation, making it suitable for demanding environments. The transistor's NPN polarity and robust construction ensure stable performance in power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (Vceo) for the BDY26 transistor is 180V.
The maximum Collector Current (Ic) for the BDY26 transistor is 6A.
The DC Current Gain (Hfe) range for the BDY26 transistor is 15 to 180.
The power dissipation rating of the BDY26 transistor is 87.5W.
The BDY26 transistor is supplied in a TO-3 package.
The RoHS status of the BDY26 transistor is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BDY26 transistor is 1 Unlimited.