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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BDX94 is a PNP silicon bipolar junction transistor (BJT) from NXP Semiconductors, housed in a TO-3 case. This transistor is designed for applications requiring robust performance, with a maximum collector-emitter voltage (Vce) of 80V and a maximum collector current (Ic) of 10A. Its high power dissipation capability of 90W and a maximum operating junction temperature of 200°C make it suitable for demanding environments.
The BDX94 offers a minimum forward current transfer ratio (hFE) of 20 and a transition frequency of 4 MHz. It also features a maximum collector power dissipation of 90W and a derating of 515mW/°C at ambient temperature. The device is not surface mounted, indicating through-hole mounting.
Key electrical characteristics include a maximum collector-base voltage of 80V and a maximum collector-emitter voltage of 80V. The maximum emitter-base voltage is 5V. The transistor has a fall time of 2µs and a rise time of 15ns, with a saturation resistance of 266mOhm.
This component is suitable for power switching and amplification circuits where reliability and high current handling are essential. Its TO-3 package is well-suited for applications requiring efficient heat dissipation.
| Qty | Low | High |
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| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the BDX94 transistor is 10 A.
The maximum collector-emitter voltage for the BDX94 is 80 V.
The maximum operating temperature for the BDX94 transistor is 200 °C.
The BDX94 transistor comes in a TO-3 case.
The minimum forward current transfer ratio (hFE) for the BDX94 transistor is 20.