| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The BDX67C is a silicon power transistor from Bourns, designed for applications requiring robust power handling. It is categorized as an NPN bipolar junction transistor (BJT) and comes in a TO-3 package, suitable for through-hole mounting.
Key electrical specifications include a maximum collector-emitter voltage of 120V and a maximum power dissipation of 150W. The transistor is also rated for a maximum operating temperature of 200°C, indicating its suitability for demanding thermal environments.
This component is part of the broader category of discrete semiconductor products, specifically single bipolar junction transistors. Its specifications suggest use in power switching or amplification circuits where reliability and significant power handling are necessary.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 120V.
The maximum power dissipation is 150W.
The maximum operating temperature is 200°C.
The BDX67C is available in a TO-3 package.