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BDX65 The Philips BDX65 is an NPN Silicon Darlington Power Transistor designed for amplifier applications. It features a Vceo of 60V and a continuous collector current (Ic) of 12A.
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BDX65

Available from 1 distributors
Mfr Name: Philips
Philips
The Philips BDX65 is an NPN Silicon Darlington Power Transistor designed for amplifier applications. It features a Vceo of 60V and a continuous collector current (Ic) of 12A.
✓ Total Stock: 40 pcs
$ Price Range: $0.77

BDX65 Available from 1 distributor

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BDX65 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Mounting Type
Power Dissipation
Tape & Reel
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BDX65 Description

Short technical summary and product information.

The BDX65 from Philips is an NPN Silicon Darlington Power Transistor housed in a TO-3 package. This component is suitable for use as output devices in complementary general-purpose amplifier applications.

 

Key electrical specifications include a collector-emitter voltage (Vceo) of 60V and a continuous collector current (Ic) of 12A. It offers a minimum current gain (Hfe) of 1k and a transition frequency (fT) of 7MHz. The device can dissipate up to 117W of power.

 

Designed for robust performance, the BDX65 is a reliable choice for power amplification circuits. Its TO-3 metal package facilitates efficient heat dissipation, making it suitable for demanding applications where thermal management is critical.

BDX65 Quick Information

Product Type: NPN Silicon Darlington Power Transistor
Canonical Name: BDX65 NPN Silicon Darlington Power Transistor
Subcategory: Bipolar (BJT)

BDX65 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BDX65 Estimated Pricing

Qty Low High
1+ $0.77 $0.77

Estimated market price range - modelled values for guidance only, not live distributor offers.

BDX65 Features

  • NPN Silicon Darlington Power Transistor
  • 60V Collector-Emitter Voltage (Vceo)
  • 12A Continuous Collector Current (Ic)
  • 117W Maximum Power Dissipation
  • TO-3 Metal Package

BDX65 Applications

  • Used in power switching circuits
  • Suitable for RF amplification
  • Ideal for high-voltage applications
  • Applicable in motor control modules

BDX65 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (Vceo) for the BDX65?

The maximum collector-emitter voltage (Vceo) for the BDX65 is 60V.

What is the continuous collector current (Ic) rating for the BDX65?

The continuous collector current (Ic) rating for the BDX65 is 12A.

What is the minimum current gain (Hfe) of the BDX65 transistor?

The BDX65 transistor has a minimum current gain (Hfe) of 1000 (1k).

What is the transition frequency (fT) for the BDX65?

The transition frequency (fT) for the BDX65 is 7MHz.

What is the maximum power dissipation for the BDX65?

The maximum power dissipation for the BDX65 is 117W.

What package type is the BDX65 transistor supplied in?

The BDX65 transistor is supplied in a TO-3 package.

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