| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BDX64B is a PNP Silicon Darlington Power Transistor manufactured by ITC, housed in a TO-3 metal package. This component is engineered for high-current power amplification and switching applications.
Key electrical characteristics include a maximum Collector-Emitter Voltage (VCEO) of -120V and a maximum continuous Collector Current (IC(RMS)) of -12A, with a peak current (ICM) of -16A. The device offers a significant power dissipation capability of 117W at 25°C case temperature. Its DC current gain (hFE) is rated at a minimum of 750 at -12A collector current.
Thermal performance is supported by a low Junction-to-Case thermal resistance of 1.5°C/W. The operating junction temperature range is from -55°C to +200°C. The transistor is designed for through-hole mounting.
This series of transistors, including the BDX64, BDX64A, BDX64B, and BDX64C, offers complementary NPN versions (BDX65 series). The BDX64B is suitable for various power control and amplification circuits where robust performance is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BDX64B is -120V.
The maximum continuous collector current (IC(RMS)) for the BDX64B is -12A.
The power dissipation (PT) for the BDX64B at a case temperature of 25°C is 117W.
The BDX64B transistor is mounted in a TO-3 metal package.
The thermal resistance from junction to case (RthJ-C) for the BDX64B is 1.5°C/W.
The minimum DC current gain (hFE) of the BDX64B at VCE=-3V and IC=-5A is 1000.