| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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12 pcs
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12 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Power Dissipation |
The BDX64B, manufactured by SML, is a silicon PNP Darlington power transistor designed for power amplification and switching applications. It is mounted in a TO-3 metal package.
Key electrical characteristics include a Collector-Emitter Voltage (VCEO) of -100V and a maximum continuous Collector Current (IC(RMS)) of -12A. The device also offers a typical Forward Voltage (VF) of 1.8V at 5A and a typical D.C. Current Gain (hFE) of 1000 at -5A.
With a Junction Temperature (TJ) range of -55 to +200°C and a Thermal Resistance (RthJ-C) of 1.5°C/W, the BDX64B is suitable for demanding thermal environments. The transistor operates reliably within specified limits, making it a robust choice for various power applications.
This component is compliant with RoHS3 standards and has a Moisture Sensitivity Level (MSL) of 1. Its TO-3 package is designed for through-hole mounting, facilitating integration into circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the BDX64B is -100V.
The maximum continuous Collector Current (IC(RMS)) for the BDX64B is -12A.
The typical Forward Voltage (VF) of the BDX64B is 1.8V when measured with a 5A pulse current.
The minimum D.C. Current Gain (hFE) for the BDX64B is 1000 when measured at VCE=-3V and IC=-5A.
The BDX64B is mounted in a TO-3 metal package.
The operating junction temperature range for the BDX64B is -55 to +200°C.
The BDX64B is RoHS3 Compliant.