| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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11 pcs
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11 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Thermal Resistance |
The BDX63C from SML is an NPN Epitaxial Base Darlington Power Transistor, suitable for audio output stages and general amplifier and switching applications. It is housed in a TO-3 package.
Key electrical characteristics include a collector-emitter voltage (VCEO) of up to 120V, a continuous collector current (IC) of 8A, and a peak collector current (ICM) of 12A. The device offers a total power dissipation (Ptot) of 90W at 25°C case temperature. The maximum junction temperature (Tj) is 200°C, with a storage temperature range from -65°C to 200°C.
Mechanical data indicates the transistor is in a TO-3 package, with the case connected to the collector. The thermal resistance from junction to mounting base (Rth j-mb) is 1.94°C/W.
This transistor is part of a series that includes PNP complements (BDX62 series). Its monolithic Darlington circuit design provides high current gain.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BDX63C is 120V.
The continuous collector current (IC) rating for the BDX63C is 8A.
The total power dissipation (Ptot) for the BDX63C is 90W at a case temperature of 25°C.
The BDX63C is supplied in a TO-3 package.