BDX54CTU BDX54CTU is a PNP Darlington transistor from On Semiconductor. It features a 100V collector-emitter voltage, 8A continuous collector current, and a high DC current gain of 750 minimum at 3A.
Mfr Part #:

BDX54CTU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
BDX54CTU is a PNP Darlington transistor from On Semiconductor. It features a 100V collector-emitter voltage, 8A continuous collector current, and a high DC current gain of 750 minimum at 3A.
Total Stock: 12,028 pcs
$ Price Range: $0.21

BDX54CTU Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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12,028 pcs
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BDX54CTU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current (Max)
Collector Current (Maximum)
Collector-Base Voltage (VCBO)
Collector-Emitter Voltage (VCEO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain (hFE) (Typical @ Ic=4 A)
Emitter-Base Voltage (VEBO)
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Thermal Resistance - Junction to Case
Thermal Resistance Junction-to-Ambient
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Vce Saturation (Maximum @ Ic=5 A)
Voltage

BDX54CTU Description

Short technical summary and product information.

The BDX54CTU is a PNP Darlington transistor designed for general-purpose amplifier and low-speed switching applications. It is manufactured by On Semiconductor and comes in a TO-220-3 through-hole package.

 

Key electrical specifications include a collector-emitter voltage (VCEO) of 100V, a continuous collector current rating of 8A, and a peak collector current of 12A. The device offers a high DC current gain (hFE) of 750 minimum at 3A collector current, with a typical gain of 2500 at 4A. The collector-emitter saturation voltage is 2V maximum at 3A collector current.

 

The transistor has a maximum power dissipation of 65W at a case temperature of 25°C, with a derating factor of 0.48 W/°C above 25°C. It operates over a junction temperature range of -65°C to +150°C. The device is Pb-Free and RoHS compliant.

BDX54CTU Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: BDX54CTU PNP Darlington Transistor
Subcategory: Single Bipolar Junction Transistor

BDX54CTU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BDX54CTU Estimated Pricing

Qty Low High
3,000+ $0.21 $0.21

Estimated market price range - modelled values for guidance only, not live distributor offers.

BDX54CTU Features

  • PNP Darlington transistor for amplification and switching.
  • 100V collector-emitter sustaining voltage.
  • 8A continuous collector current rating.
  • High DC current gain of 750 minimum at 3A.
  • TO-220-3 through-hole package for easy mounting.

BDX54CTU Applications

  • General-purpose amplifier and driver circuits.
  • Low-speed switching applications.
  • Medium-power load driving and control.
  • Complementary pairing with NPN BDX53C.

BDX54CTU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the BDX54CTU?

The collector-emitter voltage (VCEO) is 100V minimum.

What is the maximum continuous collector current?

The maximum continuous collector current is 8A.

What package does the BDX54CTU come in?

It comes in a TO-220-3 through-hole package.

What is the operating temperature range?

The operating junction temperature range is -65°C to +150°C.

Is the BDX54CTU RoHS compliant?

Yes, the BDX54CTU is RoHS3 compliant and Pb-Free.

What is the DC current gain (hFE) of this transistor?

The minimum DC current gain is 750 at 3A collector current and 3V Vce. Typical gain is 2500 at 4A.

What is the maximum power dissipation?

The maximum power dissipation is 65W at a case temperature of 25°C, derating 0.48 W/°C above 25°C.

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