BDX53CTU

The BDX53CTU is an NPN Darlington transistor from onsemi designed for general-purpose amplifier and low-speed switching applications. It features a monolithic construction with built-in base-emitter shunt resistors for enhanced reliability. Key electrical specifications include a collector-emitter voltage (VCEO) of 100V, continuous collector current of 8A (12A peak), and a maximum power dissipation of 65W at case temperature 25°C. The DC current gain (hFE) is a minimum of 750 at 3A collector current and 3V VCE, with a typical value of 2500 at 4A. Collector-emitter saturation voltage is low, at 2V max at 3A and 4V max at 5A. The device operates over a junction temperature range of -65°C to +150°C. Thermal resistance from junction to case is 1.92°C/W, and junction to ambient is 70°C/W. The transistor is housed in a standard TO-220-3 through-hole package, making it suitable for power applications requiring efficient heat sinking. It is RoHS3 compliant and lead-free (Pb-Free). Complemented by PNP counterparts BDX54B (80V) and BDX54C (100V).