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BDX53C The BDX53C is an NPN Darlington transistor from On Semiconductor. It features 100V collector-emitter breakdown voltage and 8A continuous collector current, housed in a TO-220-3 through-hole package.
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BDX53C

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The BDX53C is an NPN Darlington transistor from On Semiconductor. It features 100V collector-emitter breakdown voltage and 8A continuous collector current, housed in a TO-220-3 through-hole package.
✓ Total Stock: 4 pcs
$ Price Range: $0.34 - $1.57

BDX53C Available from 2 distributors

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✓ Non-Authorised
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3 pcs
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BDX53C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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BDX53C Description

Short technical summary and product information.

The BDX53C from On Semiconductor is an NPN Darlington transistor designed for high-current switching and amplification applications. It offers a collector-emitter breakdown voltage of 100 V and can handle a continuous collector current of 8 A, with a maximum power dissipation of 60 W. The device provides a minimum DC current gain (hFE) of 750 when tested at Ic=3A and Vce=3V, and a maximum collector-emitter saturation voltage of 2 V at Ib=12mA and Ic=3A.

 

This transistor is packaged in a standard TO-220-3 through-hole package, which allows for easy mounting on PCBs and effective heat dissipation. The junction operating temperature is rated up to 150 °C. The device is reported as RoHS3 compliant and REACH unaffected, though these compliance claims are unverified.

 

Typical applications include relay and solenoid drivers, motor control circuits, and power output stages where high current gain is essential. The high minimum hFE reduces base drive requirements, making it suitable for direct interfacing with low-power logic or microcontroller outputs. The BDX53C is a widely cross-referenced part, with a Digi-Key equivalent number 2156-BDX53C-488-ND.

BDX53C Quick Information

Product Type: NPN Darlington Transistor
Canonical Name: On Semiconductor BDX53C NPN Darlington Transistor
Subcategory: Darlington Transistor

BDX53C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BDX53C Estimated Pricing

Qty Low High
1+ $1.57 $1.57
10+ $0.97 $0.97
100+ $0.73 $0.73
500+ $0.57 $0.57
1,000+ $0.49 $0.49
3,000+ $0.44 $0.44
6,000+ $0.39 $0.39
9,000+ $0.36 $0.36
24,000+ $0.34 $0.34

Estimated market price range - modelled values for guidance only, not live distributor offers.

BDX53C Features

  • 100V collector-emitter breakdown voltage.
  • 8A continuous collector current rating.
  • 60W maximum power dissipation.
  • Minimum DC current gain of 750.
  • Through-hole TO-220-3 package.

BDX53C Applications

  • Suitable for high-current switching and relay drivers.
  • Used in motor control and power amplifier circuits.

BDX53C FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the BDX53C?

100 V.

What is the maximum continuous collector current?

8 A.

What is the power dissipation rating?

60 W.

What is the minimum DC current gain (hFE)?

750 at Ic=3A, Vce=3V.

What is the collector-emitter saturation voltage?

2 V maximum at Ib=12mA, Ic=3A.

What is the maximum junction operating temperature?

150 °C.

What package type is the BDX53C available in?

TO-220-3 through-hole package.

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