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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,950 pcs
|
12950 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
9,520 pcs
|
9520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
19 pcs
|
19 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Storage Temperature | |
| Tape & Reel | |
| Transistor Type |
The BDX34C is a PNP Darlington bipolar junction transistor (BJT) manufactured by STMicroelectronics. This component is designed for general-purpose amplification and switching applications.
Key electrical specifications include a collector-emitter breakdown voltage of 100V and a maximum continuous collector current of 10A. It offers a high DC current gain (hFE) of 750 at 3A and 3V, with a Vce saturation of 2.5V at 6mA and 3A. The maximum power dissipation is rated at 70W.
This transistor is housed in a TO-220 package, suitable for through-hole mounting. The operating temperature range is up to 150°C (TJ). The component is described as RoHS3 Compliant, with an MSL of 1 Unlimited, and REACH Unaffected.
This part is ideal for applications requiring moderate power handling and high gain. Its robust specifications make it suitable for various electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic) for the BDX34C is 10 A.
The collector-emitter breakdown voltage (Vce) for the BDX34C is 100 V.
The maximum power dissipation for the BDX34C is 70 W.
The operating temperature for the BDX34C is 150°C (TJ).
The BDX34C is available in a TO-220 package.