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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,150 pcs
|
2150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Tape & Reel | |
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The BDX33BG is an NPN Darlington silicon power transistor manufactured by On Semiconductor. It is designed for general purpose and low speed switching applications.
Key electrical specifications include a collector-emitter voltage (VCEO) of 80V, continuous collector current of 10A, and a DC current gain (hFE) of 750 minimum at 3A collector current and 3V collector-emitter voltage. The maximum collector-emitter saturation voltage is 2.5V at 6mA base current and 3A collector current. The device can dissipate up to 70W at a case temperature of 25°C.
The transistor is housed in a TO-220-3 through-hole package with a TO-220 supplier device package. It has an operating junction temperature range of -65°C to 150°C. The monolithic construction includes built-in base-emitter shunt resistors.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.57 | $1.57 |
| 10+ | $0.75 | $0.75 |
| 100+ | $0.68 | $0.68 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BDX33BG has a collector-emitter voltage (VCEO) of 80V.
The maximum continuous collector current is 10A.
The power dissipation is 70W at a case temperature of 25°C.
The BDX33BG comes in a TO-220-3 through-hole package.
The operating junction temperature range is -65°C to 150°C.
The BDX33BG is listed as RoHS3 compliant, but this information is unverified.