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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Medical Grade | |
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| Supplier Device Package | |
| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The BDW94 is a PNP Darlington transistor manufactured by ON Semiconductor. It is designed for general-purpose switching and amplification applications requiring high current gain. The device features a Darlington pair configuration, offering a minimum DC current gain (hFE) of 750 at a collector current of 5A and collector-emitter voltage of 3V.
Key electrical ratings include a maximum collector-emitter voltage (Vceo) of 45V, a maximum collector current (Ic) of 12A, and a maximum power dissipation (Pd) of 80W. The saturation voltage is 3V maximum at a base current of 100mA and collector current of 10A. The device can operate at junction temperatures up to 150°C.
The BDW94 is housed in a standard TO-220-3 through-hole package, suitable for heatsinking and robust mounting on printed circuit boards. The through-hole mounting allows for easy manual assembly and replacement. This transistor is commonly used in power switching circuits, motor control, and high-current driver stages.
| Qty | Low | High |
|---|---|---|
| 505+ | $0.59 | $0.59 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Maximum collector-emitter voltage (Vceo) is 45V.
The BDW94 is available in a TO-220-3 through-hole package.
Maximum junction temperature is 150°C.
RoHS status is unverified but indicated as RoHS3 compliant.
Maximum collector current (Ic) is 12A.
Maximum power dissipation is 80W.
Minimum DC current gain (hFE) is 750 at Ic=5A, Vce=3V.