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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
915 pcs
|
915 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BDW93CTU is an NPN Darlington transistor from ON Semiconductor, designed for high-current switching applications. It features a collector-emitter breakdown voltage of 100V and a continuous collector current rating of 12A, with a power dissipation of 80W. The device offers a minimum DC current gain (hFE) of 750 at 5A, 3V, and a maximum Vce saturation voltage of 3V at 10A, 100mA base current. This Darlington configuration provides high current gain, making it suitable for driving loads such as relays, solenoids, and motors. The transistor is housed in a standard TO-220-3 through-hole package, which allows for easy mounting on heatsinks for thermal management. The operating junction temperature is rated up to 150°C. Compliance with RoHS3 is indicated but unverified. The part is a direct replacement for Fairchild's BDW93CTU, now integrated into ON Semiconductor's portfolio.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $0.45 | $0.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
12A.
80W.
TO-220-3.
Up to 150°C junction temperature.
RoHS3 compliant (unverified).
Minimum 750 at 5A, 3V.