| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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945 pcs
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945 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| AEC Qualified | |
| Automotive Grade | |
| Current Rating | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
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| Tape & Reel | |
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The BDW84C is a PNP Silicon Epitaxial-Base power monolithic Darlington transistor manufactured by NXP Semiconductors. It is housed in a TO-218 plastic package and is intended for use in power linear and switching applications within industrial equipment.
Key electrical characteristics include a collector-emitter voltage of 100V and a continuous collector current rating of 15A. The transistor also features a high DC current gain, with values up to 20000 specified. Its thermal performance is supported by a thermal resistance junction-to-case of 0.96 °C/W, and it can dissipate up to 130W at 25°C.
This component is suitable for applications requiring high current capability and fast switching speeds. The complementary NPN type is the BDW83C. The TO-218 package is designed for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $165.89 | $165.89 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BDW84C is 100V.
The maximum continuous collector current (IC) for the BDW84C is 15A.
The BDW84C transistor is supplied in a TO-218 package.
The maximum power dissipation for the BDW84C is 130W at 25°C.
The operating junction temperature range for the BDW84C is -65°C to 150°C.
The minimum DC current gain (hFE) of the BDW84C at 6A and 3V is 750.