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24 pcs
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24 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BDW83C is a Silicon Epitaxial-Base NPN power monolithic Darlington transistor manufactured by Texas Instruments. It is housed in a Jedec TO-218 plastic package and is intended for use in power linear and switching applications.
Key electrical specifications include a Collector-Emitter Voltage (VCEO) of 100V, a continuous Collector Current (IC) of 15A, and a maximum Total Power Dissipation (Ptot) of 130W at 25°C. The transistor exhibits a high DC Current Gain (hFE) and fast switching speeds, with a typical turn-on time of 0.9µs and turn-off time of 6µs.
This device is suitable for various industrial equipment applications requiring high current capability and reliable switching performance. The TO-218 package is designed for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.26 | $1.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BDW83C is 100V.
The BDW83C has a continuous collector current (IC) rating of 15A.
The maximum total power dissipation (Ptot) for the BDW83C is 130W at 25°C.
The typical DC current gain (hFE) of the BDW83C at 6A and 3V is 750.
The BDW83C is supplied in a TO-218 package.